BSC014N04LSIATMA1 vs ISC015N04NM5ATMA1 Perbandingan

Perbandingan bersamaan detil BSC014N04LSIATMA1 dari Infineon dan ISC015N04NM5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSC014N04LSIATMA1 BSC014N04LSIATMA1 - 40V 100A OptiMOS N-FET | Infineon

BSC014N04LSIATMA1 - 40V 100A OptiMOS N-FET | Infineon

BSC014N04LSIATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSC014N04LSIATMA1 ISC015N04NM5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel N-Channel
Technology OptiMOS 5 (trench, thin-wafer) OptiMOS 5 (trench MOSFET)
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID, Tc) 100 A —
Continuous Drain Current (ID, Ta) 31 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM rating] [DATA_NEEDED: pulsed IDM rating]
RDS(on) max at VGS=10 V 1.4 mOhm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS absolute maximum] —
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical] —
Power Dissipation (PD, Tc) 96 W —
Power Dissipation (PD, Ta) 2.5 W —
Rentang Suhu Kerja -55 C to +150 C -55 C to +175 C (junction, per OptiMOS 5)
Paket PG-TDSON-8 FL (TDSON-8 with exposed drain pad) —
Tipe Mounting Surface Mount Surface Mount
Level MSL 1 (per JEDEC J-STD-020) 1 (per Infineon SuperSO8 family)
Status RoHS Compliant Compliant
Tradename OptiMOS —
Manufacturer — Infineon Technologies
Series — OptiMOS 5 40V Normal Level
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) — 3.4 V (typ)
R_DS(on) max — 1.5 mOhm @ VGS=10 V, ID=50 A
Continuous Drain Current (ID) at Ta=25C — 33 A
Continuous Drain Current (ID) at Tc=25C — 206 A
Power Dissipation (Ta) — 3 W
Power Dissipation (Tc) — 115 W
Paket / Case — PG-TDSON-8 FL (SuperSO8 5x6 mm)
Jumlah Pin — 8
Drive Level — Normal Level (VGS(th) ~3.4 V)

Spek dan Sumber

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