BSC014N04LSIATMA1 vs ISC015N04NM5ATMA1 比較
詳細並排比較 BSC014N04LSIATMA1 由 Infineon 與 ISC015N04NM5ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSC014N04LSIATMA1 | ISC015N04NM5ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | N-Channel |
| Technology | OptiMOS 5 (trench, thin-wafer) | OptiMOS 5 (trench MOSFET) |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID, Tc) | 100 A | — |
| Continuous Drain Current (ID, Ta) | 31 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM rating] | [DATA_NEEDED: pulsed IDM rating] |
| RDS(on) max at VGS=10 V | 1.4 mOhm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS absolute maximum] | — |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical] | — |
| Power Dissipation (PD, Tc) | 96 W | — |
| Power Dissipation (PD, Ta) | 2.5 W | — |
| 工作溫度範圍 | -55 C to +150 C | -55 C to +175 C (junction, per OptiMOS 5) |
| 封裝 | PG-TDSON-8 FL (TDSON-8 with exposed drain pad) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| MSL 等級 | 1 (per JEDEC J-STD-020) | 1 (per Infineon SuperSO8 family) |
| RoHS 狀態 | Compliant | Compliant |
| Tradename | OptiMOS | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 5 40V Normal Level |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | 3.4 V (typ) |
| R_DS(on) max | — | 1.5 mOhm @ VGS=10 V, ID=50 A |
| Continuous Drain Current (ID) at Ta=25C | — | 33 A |
| Continuous Drain Current (ID) at Tc=25C | — | 206 A |
| Power Dissipation (Ta) | — | 3 W |
| Power Dissipation (Tc) | — | 115 W |
| 封裝 / 外殼 | — | PG-TDSON-8 FL (SuperSO8 5x6 mm) |
| 腳位數 | — | 8 |
| Drive Level | — | Normal Level (VGS(th) ~3.4 V) |