BSC014N04LSTATMA1 vs BSC018N04LSGATMA1 Perbandingan

Perbandingan bersamaan detil BSC014N04LSTATMA1 dari Infineon dan BSC018N04LSGATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSC018N04LSGATMA1 BSC018N04LSGATMA1 - 40V 1.8mΩ N-Ch OptiMOS 3 | Infineon

BSC018N04LSGATMA1 - 40V 1.8mΩ N-Ch OptiMOS 3 | Infineon

BSC018N04LSGATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSC014N04LSTATMA1 BSC018N04LSGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC014N04LSTATMA1 —
Technology OptiMOS 5 (N-Channel Trench) MOSFET (Metal Oxide)
Drain-Source Voltage (VDS) 40 V —
Gate-Source Voltage (VGS) ±20 V —
Continuous Drain Current (ID) @ TA=25°C 33 A 30 A
Continuous Drain Current (ID) @ TC=25°C 100 A 100 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance R DS(on) max @ VGS=10V 1.45 mΩ —
R DS(on) typical @ VGS=10V [DATA_NEEDED: RDS(on) typical] —
Power Dissipation (TA) 3 W —
Power Dissipation (TC) 115 W —
Rentang Suhu Kerja -55°C to +150°C -55°C to +150°C (TJ)
Paket PG-TDSON-8 FL (SuperSO8 5x6) PG-TDSON-8-1 (SuperSO8 5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 8 —
Status RoHS Compliant Compliant (Pb-free plating)
Level MSL MSL1 —
Lead-Free Yes —
Series — OptiMOS 3
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 40 V
Power Dissipation (PD) @ TC=25°C — 125 W
Power Dissipation (PD) @ TA=25°C — 2.5 W
RDS(on) Max @ VGS=10 V — 1.8 mΩ
Drive Voltage (Max RDS(on), Min RDS(on)) — 4.5 V, 10 V
Gate Threshold Voltage (VGS(th)) Typ — [DATA_NEEDED: VGS(th) typical]
Avalanche Tested — 100% (per datasheet)
JEDEC Qualification — Yes (qualified per JEDEC for target applications)

Spek dan Sumber

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