BSC014N04LSTATMA1 vs BSC018N04LSGATMA1 比較

詳細並排比較 BSC014N04LSTATMA1 由 Infineon 與 BSC018N04LSGATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSC014N04LSTATMA1 BSC014N04LSTATMA1 - 40V 1.4mΩ OptiMOS 5 N-MOSFET | Infineon

BSC014N04LSTATMA1 - 40V 1.4mΩ OptiMOS 5 N-MOSFET | Infineon

BSC014N04LSTATMA1 ✓ 啟用中
Infineon
BSC018N04LSGATMA1 BSC018N04LSGATMA1 - 40V 1.8mΩ N-Ch OptiMOS 3 | Infineon

BSC018N04LSGATMA1 - 40V 1.8mΩ N-Ch OptiMOS 3 | Infineon

BSC018N04LSGATMA1 ✓ 啟用中

規格比較

參數 BSC014N04LSTATMA1 BSC018N04LSGATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC014N04LSTATMA1 —
Technology OptiMOS 5 (N-Channel Trench) MOSFET (Metal Oxide)
Drain-Source Voltage (VDS) 40 V —
Gate-Source Voltage (VGS) ±20 V —
Continuous Drain Current (ID) @ TA=25°C 33 A 30 A
Continuous Drain Current (ID) @ TC=25°C 100 A 100 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance R DS(on) max @ VGS=10V 1.45 mΩ —
R DS(on) typical @ VGS=10V [DATA_NEEDED: RDS(on) typical] —
Power Dissipation (TA) 3 W —
Power Dissipation (TC) 115 W —
工作溫度範圍 -55°C to +150°C -55°C to +150°C (TJ)
封裝 PG-TDSON-8 FL (SuperSO8 5x6) PG-TDSON-8-1 (SuperSO8 5x6 mm)
安裝類型 Surface Mount Surface Mount
腳位數 8 —
RoHS 狀態 Compliant Compliant (Pb-free plating)
MSL 等級 MSL1 —
Lead-Free Yes —
Series — OptiMOS 3
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 40 V
Power Dissipation (PD) @ TC=25°C — 125 W
Power Dissipation (PD) @ TA=25°C — 2.5 W
RDS(on) Max @ VGS=10 V — 1.8 mΩ
Drive Voltage (Max RDS(on), Min RDS(on)) — 4.5 V, 10 V
Gate Threshold Voltage (VGS(th)) Typ — [DATA_NEEDED: VGS(th) typical]
Avalanche Tested — 100% (per datasheet)
JEDEC Qualification — Yes (qualified per JEDEC for target applications)

資料表與資源

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