BSC014NE2LSIATMA1 vs BSC016N06NSTATMA1 Perbandingan
Perbandingan bersamaan detil BSC014NE2LSIATMA1 dari Infineon dan BSC016N06NSTATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSC014NE2LSIATMA1 | BSC016N06NSTATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Technology | N-Channel MOSFET (OptiMOS 25V) | OptiMOS 5 |
| Drain-Source Voltage (VDS) | 25 V | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Continuous Drain Current (ID, Ta) | 33 A | — |
| Continuous Drain Current (ID, Tc) | [DATA_NEEDED: Tc condition rating] | — |
| Pulsed Drain Current (IDM, Tc) | 100 A | — |
| On-State Resistance RDS(on) | 1.4 mOhm (typ) at VGS = 10 V | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ at VGS=10V] | — |
| Power Dissipation (Ta) | 2.5 W | 3 W |
| Power Dissipation (Tc) | 74 W | 167 W |
| Suhu Hubung Kerja | -55 °C to +150 °C | — |
| Paket | PG-TDSON-8-7 (SuperSO8) | PG-TDSON-8 FL (SuperSO8 5x6 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Level MSL | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL level] |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSC016N06NSTATMA1 |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Gate-to-Source Voltage (VGS) | — | ±20 V |
| Continuous Drain Current (ID, Tc=25C) | — | 100 A |
| Continuous Drain Current (ID, Ta=25C) | — | 31 A |
| On-Resistance RDS(on) max (VGS=10V) | — | 1.6 mOhm |
| Rentang Suhu Kerja | — | -55 C to +150 C |
| Series | — | OptiMOS |