BSC016N06NSATMA1 vs BSC0902NSATMA1 Perbandingan

Perbandingan bersamaan detil BSC016N06NSATMA1 dari Infineon dan BSC0902NSATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC016N06NSATMA1 BSC0902NSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Series OptiMOS™ 5 60V —
Channel Type N-Channel —
Drain-Source Voltage (VDS) 60 V 30 V
Continuous Drain Current (ID, Tc) 100 A —
Continuous Drain Current (ID, TA) 30 A —
On-Resistance RDS(on) max @ VGS=10V 1.6 mΩ —
Total Gate Charge (Qg) 71 nC —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] —
Power Dissipation (TA) 2.5 W —
Power Dissipation (TC) 139 W —
Rentang Suhu Kerja -55 °C to +150 °C -55C to +150C (Tj)
Paket PG-TDSON-8 FL (SuperSO8 5x6) PG-TDSON-8-6 (SuperSO8)
Tipe Mounting Surface Mount Surface Mount
Level MSL 1 (unlimited) —
Status RoHS Compliant —
Gate Drive (recommended) 10 V —
Technology OptiMOS™ 5 —
Tipe Transistor — N-Channel MOSFET
Continuous Drain Current (ID, Ta) — 24 A
Pulsed Drain Current (IDM, Tc) — 100 A
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 48 W
Gate Threshold Voltage (VGS(th) typ) — [DATA_NEEDED: VGS(th) typical value]
RDS(on) @ VGS=10V max — [DATA_NEEDED: RDS(on) at VGS=10V]
RDS(on) @ VGS=4.5V max — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Total Gate Charge (Qg typ) — [DATA_NEEDED: Qg typical]
Qualification — JEDEC qualified for target applications
RoHS Compliance — Compliant (Pb-free lead plating)
Bebas Halogen — Yes, per IEC 61249-2-21
Avalanche Rated — Yes (100% avalanche tested)

Spek dan Sumber

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