BSC016N06NSATMA1 vs BSC0902NSATMA1 Comparison

Detailed side-by-side comparison of BSC016N06NSATMA1 by Infineon and BSC0902NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSC016N06NSATMA1 BSC0902NSATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies —
Product Series OptiMOS™ 5 60V —
Channel Type N-Channel —
Drain-Source Voltage (VDS) 60 V 30 V
Continuous Drain Current (ID, Tc) 100 A —
Continuous Drain Current (ID, TA) 30 A —
On-Resistance RDS(on) max @ VGS=10V 1.6 mΩ —
Total Gate Charge (Qg) 71 nC —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] —
Power Dissipation (TA) 2.5 W —
Power Dissipation (TC) 139 W —
Operating Temperature Range -55 °C to +150 °C -55C to +150C (Tj)
Package PG-TDSON-8 FL (SuperSO8 5x6) PG-TDSON-8-6 (SuperSO8)
Mounting Type Surface Mount Surface Mount
MSL Level 1 (unlimited) —
RoHS Status Compliant —
Gate Drive (recommended) 10 V —
Technology OptiMOS™ 5 —
Transistor Type — N-Channel MOSFET
Continuous Drain Current (ID, Ta) — 24 A
Pulsed Drain Current (IDM, Tc) — 100 A
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 48 W
Gate Threshold Voltage (VGS(th) typ) — [DATA_NEEDED: VGS(th) typical value]
RDS(on) @ VGS=10V max — [DATA_NEEDED: RDS(on) at VGS=10V]
RDS(on) @ VGS=4.5V max — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Total Gate Charge (Qg typ) — [DATA_NEEDED: Qg typical]
Qualification — JEDEC qualified for target applications
RoHS Compliance — Compliant (Pb-free lead plating)
Halogen Free — Yes, per IEC 61249-2-21
Avalanche Rated — Yes (100% avalanche tested)

Datasheets & Resources

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