BSC018N04LSGATMA1 vs BSC014N04LSTATMA1 Perbandingan

Perbandingan bersamaan detil BSC018N04LSGATMA1 dari Infineon dan BSC014N04LSTATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSC018N04LSGATMA1 BSC018N04LSGATMA1 - 40V 1.8mΩ N-Ch OptiMOS 3 | Infineon

BSC018N04LSGATMA1 - 40V 1.8mΩ N-Ch OptiMOS 3 | Infineon

BSC018N04LSGATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSC018N04LSGATMA1 BSC014N04LSTATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 3 —
FET Type N-Channel —
Technology MOSFET (Metal Oxide) OptiMOS 5 (N-Channel Trench)
Drain-to-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) @ TC=25°C 100 A 100 A
Continuous Drain Current (ID) @ TA=25°C 30 A 33 A
Power Dissipation (PD) @ TC=25°C 125 W —
Power Dissipation (PD) @ TA=25°C 2.5 W —
RDS(on) Max @ VGS=10 V 1.8 mΩ —
Drive Voltage (Max RDS(on), Min RDS(on)) 4.5 V, 10 V —
Gate Threshold Voltage (VGS(th)) Typ [DATA_NEEDED: VGS(th) typical] —
Rentang Suhu Kerja -55°C to +150°C (TJ) -55°C to +150°C
Paket PG-TDSON-8-1 (SuperSO8 5x6 mm) PG-TDSON-8 FL (SuperSO8 5x6)
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant (Pb-free plating) Compliant
Avalanche Tested 100% (per datasheet) —
JEDEC Qualification Yes (qualified per JEDEC for target applications) —
Part Number — BSC014N04LSTATMA1
Drain-Source Voltage (VDS) — 40 V
Gate-Source Voltage (VGS) — ±20 V
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance R DS(on) max @ VGS=10V — 1.45 mΩ
R DS(on) typical @ VGS=10V — [DATA_NEEDED: RDS(on) typical]
Power Dissipation (TA) — 3 W
Power Dissipation (TC) — 115 W
Jumlah Pin — 8
Level MSL — MSL1
Lead-Free — Yes

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