BSC018N04LSGATMA1 vs BSC014N04LSTATMA1 比較
詳細並排比較 BSC018N04LSGATMA1 由 Infineon 與 BSC014N04LSTATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSC018N04LSGATMA1 | BSC014N04LSTATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 3 | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | OptiMOS 5 (N-Channel Trench) |
| Drain-to-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) @ TC=25°C | 100 A | 100 A |
| Continuous Drain Current (ID) @ TA=25°C | 30 A | 33 A |
| Power Dissipation (PD) @ TC=25°C | 125 W | — |
| Power Dissipation (PD) @ TA=25°C | 2.5 W | — |
| RDS(on) Max @ VGS=10 V | 1.8 mΩ | — |
| Drive Voltage (Max RDS(on), Min RDS(on)) | 4.5 V, 10 V | — |
| Gate Threshold Voltage (VGS(th)) Typ | [DATA_NEEDED: VGS(th) typical] | — |
| 工作溫度範圍 | -55°C to +150°C (TJ) | -55°C to +150°C |
| 封裝 | PG-TDSON-8-1 (SuperSO8 5x6 mm) | PG-TDSON-8 FL (SuperSO8 5x6) |
| 安裝類型 | Surface Mount | Surface Mount |
| RoHS 狀態 | Compliant (Pb-free plating) | Compliant |
| Avalanche Tested | 100% (per datasheet) | — |
| JEDEC Qualification | Yes (qualified per JEDEC for target applications) | — |
| Part Number | — | BSC014N04LSTATMA1 |
| Drain-Source Voltage (VDS) | — | 40 V |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance R DS(on) max @ VGS=10V | — | 1.45 mΩ |
| R DS(on) typical @ VGS=10V | — | [DATA_NEEDED: RDS(on) typical] |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 115 W |
| 腳位數 | — | 8 |
| MSL 等級 | — | MSL1 |
| Lead-Free | — | Yes |