BSC019N04NSGATMA1 vs BSC0902NSIATMA1 Perbandingan
Perbandingan bersamaan detil BSC019N04NSGATMA1 dari Infineon dan BSC0902NSIATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSC019N04NSGATMA1 | BSC0902NSIATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Transistor | N-Channel MOSFET | — |
| Technology | OptiMOS (trench) | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at TC=25C | 100 A | 100 A |
| Continuous Drain Current (ID) at TA=25C | 30 A | 23 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: IDM] |
| RDS(on) max at VGS=10V | 2.5 mΩ | — |
| RDS(on) typ at VGS=10V | 1.9 mΩ | — |
| Gate-Source Threshold (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation (PD) at TA=25C | 2.5 W | — |
| Power Dissipation (PD) at TC=25C | 125 W | — |
| Rentang Suhu Kerja | -55C to +150C | -55C to +150C (junction) |
| Paket | PG-TDSON-8-1 (TDSON-8 FL) | PG-TDSON-8-6 (TDSON-8) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 30V |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) Max | — | 30 V |
| Gate-Source Voltage (VGS) Max | — | [DATA_NEEDED: VGS max rating] |
| On-State Resistance RDS(on) Max at VGS=10V | — | 2.8 mOhm |
| Gate Charge QG(0V..10V) | — | 24 nC |
| Output Charge QOSS | — | 17 nC |
| Power Dissipation (TA) | — | 2.5 W |
| Power Dissipation (TC) | — | 48 W |
| Built-in Diode | — | Yes (single with built-in diode) |
| Level MSL | — | [DATA_NEEDED: MSL rating] |
| Lead-Free | — | Yes |
| Bebas Halogen | — | Yes |