BSC019N04NSGATMA1 vs BSC0902NSIATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC019N04NSGATMA1 disebabkan oleh Infineon dan BSC0902NSIATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSC019N04NSGATMA1 | BSC0902NSIATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Transistor | N-Channel MOSFET | — |
| Technology | OptiMOS (trench) | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at TC=25C | 100 A | 100 A |
| Continuous Drain Current (ID) at TA=25C | 30 A | 23 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: IDM] |
| RDS(on) max at VGS=10V | 2.5 mΩ | — |
| RDS(on) typ at VGS=10V | 1.9 mΩ | — |
| Gate-Source Threshold (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation (PD) at TA=25C | 2.5 W | — |
| Power Dissipation (PD) at TC=25C | 125 W | — |
| Gambaran Suhu Operasi | -55C to +150C | -55C to +150C (junction) |
| Kemasan | PG-TDSON-8-1 (TDSON-8 FL) | PG-TDSON-8-6 (TDSON-8) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 30V |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) Max | — | 30 V |
| Gate-Source Voltage (VGS) Max | — | [DATA_NEEDED: VGS max rating] |
| On-State Resistance RDS(on) Max at VGS=10V | — | 2.8 mOhm |
| Gate Charge QG(0V..10V) | — | 24 nC |
| Output Charge QOSS | — | 17 nC |
| Power Dissipation (TA) | — | 2.5 W |
| Power Dissipation (TC) | — | 48 W |
| Built-in Diode | — | Yes (single with built-in diode) |
| Aras MSL | — | [DATA_NEEDED: MSL rating] |
| Lead-Free | — | Yes |
| Boson Bebas | — | Yes |