BSC019N06NSATMA1 vs IPC50N04S5L5R5ATMA1 Perbandingan

Perbandingan bersamaan detil BSC019N06NSATMA1 dari Infineon dan IPC50N04S5L5R5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC019N06NSATMA1 IPC50N04S5L5R5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number BSC019N06NSATMA1 —
Technology / Family OptiMOS 5 (N-channel trench MOSFET) —
Drain-Source Voltage (VDS) Max 60 V —
Continuous Drain Current (ID) at TA=25C 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM pulse rating] —
On-State Resistance RDS(on) Max @ VGS=10V 1.95 mΩ (typ) —
Gate-Source Threshold Voltage VGS(th) Typ 3.3 V —
Power Dissipation (PD) at TA=25C 136 W —
Rentang Suhu Kerja -55C to +150C (junction) -55 °C to +175 °C
Paket PG-TDSON-8 FL (SuperSO8 5x6 mm) PG-TDSON-8-33 (TDSON EP 8-pin, exposed pad)
Tipe Mounting Surface Mount Surface Mount
Level MSL 1 —
Channel Type N-Channel Enhancement Mode —
Status RoHS Compliant —
Lead-Free Yes —
Avalanche Rated Yes —
Tipe Transistor — N-Channel MOSFET
Mode — Enhancement Mode
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, Tc) — 50 A
Maximum Drain Current (silicon-limited, 25 °C) — 60 A
On-Resistance RDS(on) max @ VGS=10 V — 5.5 mΩ
Gate Threshold VGS(th) — Logic Level (enhancement at ≤ 4.5 V VGS)
Power Dissipation (Tc) — 42 W
Thermal Resistance Junction-to-Case RthJC — 3.6 K/W
AEC-Q101 Qualification — Qualified (automotive grade)
MSL (Moisture Sensitivity Level) — MSL1
Peak Reflow Temperature — 260 °C
Avalanche Rating — 100 % Avalanche Tested
RoHS / REACH — RoHS Compliant (Green Product)

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