BSC030N03LSGATMA1 vs BSC120N03LSGATMA1 Perbandingan

Perbandingan bersamaan detil BSC030N03LSGATMA1 dari Infineon dan BSC120N03LSGATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC030N03LSGATMA1 BSC120N03LSGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 3 —
FET Type N-Channel N-Channel
Drain-Source Voltage (Vdss) 30 V —
Continuous Drain Current (Id) @ Tc=25C 100 A —
Continuous Drain Current (Id) @ Ta=25C 23 A —
RDS(on) Max @ VGS=10V 3 mOhm —
RDS(on) Max @ VGS=4.5V [DATA_NEEDED: typical RDS(on) at VGS=4.5V] —
Gate Threshold Voltage (Vgs th) Typ 2.2 V —
Gate Charge (Qg) Typ @ VGS=15V 55 nC —
Output Charge (Qoss) 66 pF —
Input Capacitance (Ciss) Typ 4.3 nF —
Power Dissipation (Pd) @ Ta=25C 2.5 W —
Power Dissipation (Pd) @ Tc=25C 69 W —
Suhu Hubung Kerja -55C to +150C —
Paket PG-TDSON-8-1 (SuperSO8 5x6 mm) PG-TDSON-8-5 (SuperSO-8, 5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant Compliant
Level MSL 1 1 (per JEDEC J-STD-020)
Avalanche Rated Yes (100% tested) —
Product Family — OptiMOS 3
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at Ta=25C — 12 A
Continuous Drain Current (ID) at Tc=25C — 39 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max — +/-20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
On-State Resistance RDS(on) at VGS=10V — 12 mOhm (typical)
On-State Resistance RDS(on) at VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 28 W
Rentang Suhu Kerja — -55C to +150C (TJ)

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