BSC030N03LSGATMA1 vs BSC120N03LSGATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma BSC030N03LSGATMA1 tarafından Infineon ve BSC120N03LSGATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Infineon
BSC120N03LSGATMA1 - 30V 39A OptiMOS 3 N-Channel MOSFET | Infineon
BSC120N03LSGATMA1 ✓ AktifÖzellik Karşılaştırması
| Parametre | BSC030N03LSGATMA1 | BSC120N03LSGATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 3 | — |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (Vdss) | 30 V | — |
| Continuous Drain Current (Id) @ Tc=25C | 100 A | — |
| Continuous Drain Current (Id) @ Ta=25C | 23 A | — |
| RDS(on) Max @ VGS=10V | 3 mOhm | — |
| RDS(on) Max @ VGS=4.5V | [DATA_NEEDED: typical RDS(on) at VGS=4.5V] | — |
| Gate Threshold Voltage (Vgs th) Typ | 2.2 V | — |
| Gate Charge (Qg) Typ @ VGS=15V | 55 nC | — |
| Output Charge (Qoss) | 66 pF | — |
| Input Capacitance (Ciss) Typ | 4.3 nF | — |
| Power Dissipation (Pd) @ Ta=25C | 2.5 W | — |
| Power Dissipation (Pd) @ Tc=25C | 69 W | — |
| İşletim Jant Sıcaklığı | -55C to +150C | — |
| Paket | PG-TDSON-8-1 (SuperSO8 5x6 mm) | PG-TDSON-8-5 (SuperSO-8, 5x6 mm) |
| Montaj Türü | Surface Mount | Surface Mount |
| RoHS Durumu | Compliant | Compliant |
| MSL Seviyesi | 1 | 1 (per JEDEC J-STD-020) |
| Avalanche Rated | Yes (100% tested) | — |
| Product Family | — | OptiMOS 3 |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at Ta=25C | — | 12 A |
| Continuous Drain Current (ID) at Tc=25C | — | 39 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| On-State Resistance RDS(on) at VGS=10V | — | 12 mOhm (typical) |
| On-State Resistance RDS(on) at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 28 W |
| İşletim Sıcaklığı Aralığı | — | -55C to +150C (TJ) |