BSC030N03MSGATMA1 vs BSC0993NDATMA1 Perbandingan

Perbandingan bersamaan detil BSC030N03MSGATMA1 dari Infineon dan BSC0993NDATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC030N03MSGATMA1 BSC0993NDATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 3M —
FET Type N-Channel —
Technology MOSFET (Metal Oxide) OptiMOS 5 trench MOSFET
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at Ta 21 A —
Continuous Drain Current (ID) at Tc=25°C 100 A —
Drain-Source On-Resistance (RDS(on)) 3.0 mΩ (typical at VGS=10V) —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] —
Power Dissipation at Ta 2.5 W —
Power Dissipation at Tc=25°C 69 W —
Suhu Hubung Kerja -55°C to +150°C —
Paket PG-TDSON-8-1 (SuperSO8, 8-pin, exposed pad) PG-TISON-8
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant Compliant
Drive Voltage (Min/Max RDS(on)) 4.5V / 10V —
Status Active —
Product Series — OptiMOS 5 30V
Configuration — Dual N-Channel (Array)
Drain-Source Voltage (Vds) — 30 V
Continuous Drain Current (Id) @ Ta — 17 A
Channel Mode — Enhancement
Rentang Suhu Kerja — -55C to +150C (junction)
ESD Protection — Yes (integrated)
Level MSL — [DATA_NEEDED: MSL level]
Lead-Free — Yes
Rds(on) max @ Vgs=10V — [DATA_NEEDED: Rds(on) value]
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th) value]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg value]

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