BSC032N04LSATMA1 vs BSC150N03LDGATMA1 Perbandingan

Perbandingan bersamaan detil BSC032N04LSATMA1 dari Infineon dan BSC150N03LDGATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC032N04LSATMA1 BSC150N03LDGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Series OptiMOS 5 40V —
FET Type N-Channel —
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) at Ta=25°C 21 A —
Continuous Drain Current (ID) at Tc=25°C 98 A —
RDS(on) max at VGS=10V 3.2 mΩ —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 52 W —
Gate-Source Voltage (VGS) ±20 V —
Technology OptiMOS 5 trench —
Paket PG-TDSON-8-6 (SuperSO8 5x6 mm) PG-TDSON-8-4 (5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Suhu Hubung Kerja -55°C to +175°C -55C to +150C
Status RoHS Compliant Compliant
Lead-Free Yes —
Series — OptiMOS 3
Configuration — Dual N-Channel MOSFET Array (half-bridge)
Drain-Source Voltage (Vds) — 30 V
Continuous Drain Current (Id) @ TA=25C — 20 A
Continuous Drain Current (Id) @ TA=70C — [DATA_NEEDED: Id at TA=70C]
Pulsed Drain Current (Idm) — [DATA_NEEDED: Idm]
Gate-Source Voltage (Vgs) — ±20 V
Gate Threshold Voltage (Vgs(th)) — 1.0 V to 2.5 V
On-State Resistance (Rds(on)) @ Vgs=10V — [DATA_NEEDED: typical Rds(on) mOhm]
On-State Resistance (Rds(on)) @ Vgs=4.5V — [DATA_NEEDED: typical Rds(on) mOhm]
Total Gate Charge (Qg) — [DATA_NEEDED: typical Qg nC]
Gate-Drain Charge (Qgd) — [DATA_NEEDED: typical Qgd nC]
Output Charge (Qoss) — [DATA_NEEDED: typical Qoss nC]
Power Dissipation (Pd) — 26 W
Level MSL — 1
Bebas Halogen — Yes

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