BSC034N06NSATMA1 vs BSC0501NSIATMA1 Perbandingan
Perbandingan bersamaan detil BSC034N06NSATMA1 dari Infineon dan BSC0501NSIATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSC034N06NSATMA1 | BSC0501NSIATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 60 V | 30 V |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | ±20 V |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) max at VGS=10V | 3.4 mOhm | — |
| On-Resistance RDS(on) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | [DATA_NEEDED: Qg typical] |
| Power Dissipation at Ta=25C | 2.5 W | — |
| Power Dissipation at Tc=25C | 74 W | — |
| Rentang Suhu Kerja | -55C to +150C | — |
| Technology | OptiMOS 5 | Trench-gate OptiMOS 5 |
| Paket | PG-TDSON-8-7 (SuperSO8 5x6 mm) | PG-TDSON-8-6 (SuperSO8) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Level MSL | [DATA_NEEDED: MSL level] | 1 (per JEDEC J-STD-020) |
| Status RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon |
| Product Family | — | OptiMOS 5 25V/30V |
| Tipe Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Ta | — | 29 A |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Power Dissipation at Ta (PD) | — | 2.5 W |
| Power Dissipation at Tc (PD) | — | 50 W |
| On-Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) max at 10V VGS] |
| Suhu Hubung Kerja | — | -55C to +150C |
| Avalanche Rated | — | Yes |