BSC040N08NS5ATMA1 vs BSC027N10NS5ATMA1 Perbandingan

Perbandingan bersamaan detil BSC040N08NS5ATMA1 dari Infineon dan BSC027N10NS5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC040N08NS5ATMA1 BSC027N10NS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif NRND
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC040N08NS5ATMA1 BSC027N10NS5ATMA1
Technology OptiMOS 5 (N-channel trench MOSFET) OptiMOS 5 (100V)
Drain-Source Voltage (VDS) 80 V 100 V
Continuous Drain Current (ID, Tc=25C) 100 A —
Maximum Drain Current (ID, Tc=25C, package-limited) 121 A —
On-Resistance (RDS(on) max, VGS=10V) 4 mOhm —
Power Dissipation (Ta=25C, 1in² PCB) 2.5 W —
Power Dissipation (Tc=25C) 104 W —
Paket PG-TDSON-8-7 (SuperSO8 5x6) PG-TSON-8-3 (SuperSO8 5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Suhu Hubung Kerja -55 C to +175 C —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] —
Status RoHS Compliant Compliant
Level MSL 1 [DATA_NEEDED: MSL rating]
Primary Application Synchronous rectification in telecom and server power supplies —
Channel Type — N-Channel
Gate-Source Voltage (VGS) Max — [DATA_NEEDED: VGS max rating]
Continuous Drain Current (ID) at Ta — 23 A
Continuous Drain Current (ID) at Tc — 100 A
Pulsed Drain Current (IDM) — 194 A
On-Resistance RDS(on) Max at VGS=10V — 2.7 mOhm
Power Dissipation (Ta) — 3 W
Power Dissipation (Tc) — 214 W
Rentang Suhu Kerja — [DATA_NEEDED: Tj min/max]
Qualification — Industrial (AEC-Q101 variant BSC027N10NS5 exists separately)

Spek dan Sumber

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