BSC040N08NS5ATMA1 vs BSC027N10NS5ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC040N08NS5ATMA1 disebabkan oleh Infineon dan BSC027N10NS5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC040N08NS5ATMA1 BSC027N10NS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif NRND
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC040N08NS5ATMA1 BSC027N10NS5ATMA1
Technology OptiMOS 5 (N-channel trench MOSFET) OptiMOS 5 (100V)
Drain-Source Voltage (VDS) 80 V 100 V
Continuous Drain Current (ID, Tc=25C) 100 A —
Maximum Drain Current (ID, Tc=25C, package-limited) 121 A —
On-Resistance (RDS(on) max, VGS=10V) 4 mOhm —
Power Dissipation (Ta=25C, 1in² PCB) 2.5 W —
Power Dissipation (Tc=25C) 104 W —
Kemasan PG-TDSON-8-7 (SuperSO8 5x6) PG-TSON-8-3 (SuperSO8 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Suhu Hubungan Operasi -55 C to +175 C —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] —
Status RoHS Compliant Compliant
Aras MSL 1 [DATA_NEEDED: MSL rating]
Primary Application Synchronous rectification in telecom and server power supplies —
Channel Type — N-Channel
Gate-Source Voltage (VGS) Max — [DATA_NEEDED: VGS max rating]
Continuous Drain Current (ID) at Ta — 23 A
Continuous Drain Current (ID) at Tc — 100 A
Pulsed Drain Current (IDM) — 194 A
On-Resistance RDS(on) Max at VGS=10V — 2.7 mOhm
Power Dissipation (Ta) — 3 W
Power Dissipation (Tc) — 214 W
Gambaran Suhu Operasi — [DATA_NEEDED: Tj min/max]
Qualification — Industrial (AEC-Q101 variant BSC027N10NS5 exists separately)

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