BSC047N08NS3GATMA1 vs BSC042NE7NS3GATMA1 Perbandingan
Perbandingan bersamaan detil BSC047N08NS3GATMA1 dari Infineon dan BSC042NE7NS3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSC047N08NS3GATMA1 | BSC042NE7NS3GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC047N08NS3GATMA1 | BSC042NE7NS3GATMA1 |
| Technology | OptiMOS™ 3 (N-channel trench) | OptiMOS 3 |
| Drain-Source Voltage (VDS) max | 80 V | — |
| Continuous Drain Current (ID) at Tc | 100 A | 100 A |
| Continuous Drain Current (ID) at Ta | 18 A | 19 A |
| On-Resistance RDS(on) max | 4.7 mOhm at VGS=10 V | — |
| Power Dissition (Tc) | 125 W | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Gate Threshold Voltage (VGS th) | Normal level (typ 1.7 V) | — |
| Avalanche Rated | 100% tested | — |
| Paket | PG-TDSON-8-1 (SuperSO8 5x6) | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55 °C to +175 °C (Tj) | -55C to +150C |
| RoHS / Halogen-Free | RoHS compliant, Halogen-free | — |
| Tipe Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 75 V |
| RDS(on) max at VGS=10V | — | 4.2 mOhm |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Gate Threshold Voltage (VGS(th)) typ | — | 1.7 V |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Power Dissipation (PD) at Tc | — | 125 W |
| Level MSL | — | 1 |
| Status RoHS | — | Compliant |