BSC0501NSIATMA1 vs BSC034N06NSATMA1 Perbandingan

Perbandingan bersamaan detil BSC0501NSIATMA1 dari Infineon dan BSC034N06NSATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC0501NSIATMA1 BSC034N06NSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon —
Product Family OptiMOS 5 25V/30V —
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 30 V 60 V
Continuous Drain Current (ID) at Ta 29 A —
Continuous Drain Current (ID) at Tc 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] [DATA_NEEDED: IDM]
Power Dissipation at Ta (PD) 2.5 W —
Power Dissipation at Tc (PD) 50 W —
Gate-Source Voltage (VGS) ±20 V [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] [DATA_NEEDED: VGS(th)]
On-Resistance (RDS(on)) [DATA_NEEDED: RDS(on) max at 10V VGS] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] [DATA_NEEDED: Qg]
Suhu Hubung Kerja -55C to +150C —
Paket PG-TDSON-8-6 (SuperSO8) PG-TDSON-8-7 (SuperSO8 5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Level MSL 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL level]
Status RoHS Compliant Compliant
Avalanche Rated Yes —
Technology Trench-gate OptiMOS 5 OptiMOS 5
Polarity — N-Channel
Continuous Drain Current (ID) at TC=25C — 100 A
On-Resistance RDS(on) max at VGS=10V — 3.4 mOhm
On-Resistance RDS(on) max at VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Power Dissipation at Ta=25C — 2.5 W
Power Dissipation at Tc=25C — 74 W
Rentang Suhu Kerja — -55C to +150C

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