BSC0501NSIATMA1 vs BSC034N06NSATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSC0501NSIATMA1 sa pamamagitan ng Infineon at BSC034N06NSATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSC0501NSIATMA1 BSC0501NSIATMA1 - 30V N-Ch OptiMOS 5 MOSFET 100A | Infineon

BSC0501NSIATMA1 - 30V N-Ch OptiMOS 5 MOSFET 100A | Infineon

BSC0501NSIATMA1 ✓ Nakahanda
Infineon
BSC034N06NSATMA1 BSC034N06NSATMA1 - 60V 100A 3.4mOhm N-Ch MOSFET | Infineon

BSC034N06NSATMA1 - 60V 100A 3.4mOhm N-Ch MOSFET | Infineon

BSC034N06NSATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSC0501NSIATMA1 BSC034N06NSATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon —
Product Family OptiMOS 5 25V/30V —
Uri ng Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 30 V 60 V
Continuous Drain Current (ID) at Ta 29 A —
Continuous Drain Current (ID) at Tc 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] [DATA_NEEDED: IDM]
Power Dissipation at Ta (PD) 2.5 W —
Power Dissipation at Tc (PD) 50 W —
Gate-Source Voltage (VGS) ±20 V [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] [DATA_NEEDED: VGS(th)]
On-Resistance (RDS(on)) [DATA_NEEDED: RDS(on) max at 10V VGS] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] [DATA_NEEDED: Qg]
Temperature ng Junction na Operasyon -55C to +150C —
Packhaging PG-TDSON-8-6 (SuperSO8) PG-TDSON-8-7 (SuperSO8 5x6 mm)
Uri ng Pagpapasok Surface Mount Surface Mount
Level ng MSL 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL level]
Tindminan RoHS Compliant Compliant
Avalanche Rated Yes —
Technology Trench-gate OptiMOS 5 OptiMOS 5
Polarity — N-Channel
Continuous Drain Current (ID) at TC=25C — 100 A
On-Resistance RDS(on) max at VGS=10V — 3.4 mOhm
On-Resistance RDS(on) max at VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Power Dissipation at Ta=25C — 2.5 W
Power Dissipation at Tc=25C — 74 W
Hanay ng Temperature na Operasyon — -55C to +150C

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