BSC052N08NS5ATMA1 vs BSC0901NSATMA1 Perbandingan

Perbandingan bersamaan detil BSC052N08NS5ATMA1 dari Infineon dan BSC0901NSATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC052N08NS5ATMA1 BSC0901NSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC052N08NS5ATMA1 —
Technology OptiMOS 5 N-Channel Trench MOSFET (OptiMOS)
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 80 V —
Continuous Drain Current (ID, Tc) 95 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) max @ VGS=10V 5.2 mΩ —
Gate-Source Voltage (VGS) ±20 V —
Gate Threshold Voltage VGS(th) typ 2.5-3.0 V —
Total Power Dissipation (Tc) 83 W —
Total Power Dissipation (Ta) 2.5 W —
Suhu Hubung Kerja -55C to +150C —
Paket PG-TDSON-8 (SuperSO8) 5x6 mm TDSON-8-5 (PG-TDSON-8-5) / SuperSO8 5x6 mm
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant Compliant
Level MSL 1 (unlimited) —
Part Family — OptiMOS 30V
Drain-to-Source Voltage (VDS) Max — 30 V
Continuous Drain Current (ID) at Tc — 100 A
Continuous Drain Current (ID) at Ta — 28 A
On-State Resistance RDS(on) Max at VGS=10V — 1.9 mOhm
On-State Resistance RDS(on) Typ at VGS=10V — [DATA_NEEDED: RDS(on) typical]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th)]
Gate Charge (Qg) Typ — [DATA_NEEDED: Qg total]
Avalanche Energy (EAS) — 80 mJ
Power Dissipation (PD) at Tc — 69 W
Power Dissipation (PD) at Ta — 2.5 W
Rentang Suhu Kerja — -55C to +150C
Tingkat Sensitivitas Kekeringan (MSL) — 1
Built-in Body Diode — Yes
Configuration — Single N-Channel with Built-in Diode

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