BSC052N08NS5ATMA1 vs BSC0901NSATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC052N08NS5ATMA1 disebabkan oleh Infineon dan BSC0901NSATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC052N08NS5ATMA1 BSC0901NSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC052N08NS5ATMA1 —
Technology OptiMOS 5 N-Channel Trench MOSFET (OptiMOS)
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 80 V —
Continuous Drain Current (ID, Tc) 95 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) max @ VGS=10V 5.2 mΩ —
Gate-Source Voltage (VGS) ±20 V —
Gate Threshold Voltage VGS(th) typ 2.5-3.0 V —
Total Power Dissipation (Tc) 83 W —
Total Power Dissipation (Ta) 2.5 W —
Suhu Hubungan Operasi -55C to +150C —
Kemasan PG-TDSON-8 (SuperSO8) 5x6 mm TDSON-8-5 (PG-TDSON-8-5) / SuperSO8 5x6 mm
Jenis Pemasangan Surface Mount Surface Mount
Status RoHS Compliant Compliant
Aras MSL 1 (unlimited) —
Part Family — OptiMOS 30V
Drain-to-Source Voltage (VDS) Max — 30 V
Continuous Drain Current (ID) at Tc — 100 A
Continuous Drain Current (ID) at Ta — 28 A
On-State Resistance RDS(on) Max at VGS=10V — 1.9 mOhm
On-State Resistance RDS(on) Typ at VGS=10V — [DATA_NEEDED: RDS(on) typical]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th)]
Gate Charge (Qg) Typ — [DATA_NEEDED: Qg total]
Avalanche Energy (EAS) — 80 mJ
Power Dissipation (PD) at Tc — 69 W
Power Dissipation (PD) at Ta — 2.5 W
Gambaran Suhu Operasi — -55C to +150C
Tingkat sensitiviti Air Nama (MSL) — 1
Built-in Body Diode — Yes
Configuration — Single N-Channel with Built-in Diode

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