BSC059N04LS6ATMA1 vs BSC072N08NS5ATMA1 Perbandingan

Perbandingan bersamaan detil BSC059N04LS6ATMA1 dari Infineon dan BSC072N08NS5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSC059N04LS6ATMA1 BSC059N04LS6ATMA1 - 40V 59A OptiMOS 6 N-MOSFET | Infineon

BSC059N04LS6ATMA1 - 40V 59A OptiMOS 6 N-MOSFET | Infineon

BSC059N04LS6ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSC059N04LS6ATMA1 BSC072N08NS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS 6 (N-channel MOSFET) OptiMOS 5
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) at TA=25C 17 A —
Continuous Drain Current (ID) at TC=25C 49 A —
Pulsed Drain Current (ID,pulse) at TC=25C 59 A —
On-Resistance RDS(on) max 5.9 mOhm at VGS=10 V —
Total Power Dissipation at TA=25C 3 W —
Total Power Dissipation at TC=25C 38 W —
Gate-Source Voltage (VGS) max +/-20 V —
Rentang Suhu Kerja -55C to +150C [DATA_NEEDED: full min/max operating Tj]
Paket PG-TDSON-8-6 (SuperSO8 5x6 mm) PG-TDSON-8-7 (SuperSO8 5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Diode Continuous Forward Current (IS) 38 A at TC=25C —
Diode Pulse Current (IS,pulse) 236 A at TC=25C —
Status RoHS Compliant Compliant
Lead-Free Yes —
Manufacturer — Infineon Technologies
Part Family — BSC072N08NS5 (OptiMOS 5)
Tipe Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) Max — 80 V
Continuous Drain Current (ID) at Tc — 74 A
Drain-Source On-Resistance (RDS(on)) Max — 7.2 mOhm at VGS=10V
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 69 W
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: typical VGS(th) value]
Total Gate Charge (Qg) — [DATA_NEEDED: typical Qg]
Level MSL — [DATA_NEEDED: MSL rating]
Shipping Pack — Tape & Reel (ATMA1)
Standard Pack Quantity — 5000

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