BSC066N06NSATMA1 vs BSC059N04LSGATMA1 Perbandingan
Perbandingan bersamaan detil BSC066N06NSATMA1 dari Infineon dan BSC059N04LSGATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSC066N06NSATMA1 | BSC059N04LSGATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Drain-Source Voltage (VDS) | 60 V | 40 V |
| Continuous Drain Current (ID) at TC=25°C | 64 A | — |
| Continuous Drain Current (ID) at TC=100°C | 45 A | — |
| Pulsed Drain Current (IDM) | 256 A | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | 6.6 mΩ (max) | — |
| Gate Threshold Voltage (VGS(th)) | 1.7 V (typ) | — |
| Total Gate Charge (Qg) | 26 nC (typ) | — |
| Power Dissipation (PD) at TC=25°C | 46 W | — |
| Power Dissipation (PD) at TA=25°C | 2.5 W | — |
| Thermal Resistance, Junction-to-Case (RθJC) | 1.3 °C/W | — |
| Suhu Hubung Kerja | -55°C to +150°C | — |
| Paket | PG-TDSON-8-6 (TDSON EP) | PG-TDSON-8-5 (SuperSO8 5x6 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Level MSL | 1 | 1 (per JEDEC J-STD-020) |
| Status RoHS | Compliant | Compliant |
| Technology | OptiMOS 5 60 V trench-gate | OptiMOS 3 (N-channel trench MOSFET) |
| Continuous Drain Current (ID, Tc=25C) | — | 73 A |
| Continuous Drain Current (ID, Ta=25C) | — | 16 A |
| On-State Resistance RDS(on) max @ VGS=10V | — | 5.9 mOhm |
| Power Dissipation (Tc=25C) | — | 50 W |
| Power Dissipation (Ta=25C) | — | 2.5 W |
| Gate-Source Threshold Voltage VGS(th) | — | 1.2 V to 2.0 V (typ) |
| Total Gate Charge Qg | — | [DATA_NEEDED: Qg total, typical nC] |
| Rentang Suhu Kerja | — | -55 C to +150 C |
| REACH Status | — | Compliant |
| Channel Type | — | N-Channel |