BSC074N15NS5ATMA1 vs BSC019N08NS5ATMA1 Perbandingan
Perbandingan bersamaan detil BSC074N15NS5ATMA1 dari Infineon dan BSC019N08NS5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSC074N15NS5ATMA1 | BSC019N08NS5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Transistor | N-Channel MOSFET | — |
| Technology | OptiMOS™ 5 trench | OptiMOS 5 (N-channel trench) |
| Drain-Source Voltage (VDS) | 150 V | — |
| Continuous Drain Current (ID) at TC=25°C | 114 A | — |
| Power Dissition (PD) at TC=25°C | 214 W | — |
| On-Resistance RDS(on) max @ VGS=10V | 7.4 mΩ | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | ±20 V |
| Paket | SuperSO8 5x6 (PG-TSON-8-3) with wettable flanks | PG-TSON-8-3 (SuperSO8 5x6 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | [DATA_NEEDED: TJ min/max] | -55 C to +150 C |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typ] | 3.0 V |
| Total Gate Charge Qg | [DATA_NEEDED: Qg total] | [DATA_NEEDED: total gate charge Qg] |
| Status RoHS | Compliant | Compliant |
| Level MSL | [DATA_NEEDED: MSL rating] | 1 |
| Body Diode | Integrated | — |
| Manufacturer | — | Infineon Technologies |
| Polarity | — | N-Channel |
| Drain-Source Voltage (VDS) max | — | 80 V |
| Continuous Drain Current (ID) at TA=25C | — | 28 A |
| Continuous Drain Current (ID) at TC=25C | — | 237 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) max at VGS=10V | — | 1.9 mOhm |
| Power Dissipation (TA=25C) | — | 3 W |
| Power Dissipation (TC=25C) | — | 214 W |
| Avalanche Rated | — | Yes |