BSC074N15NS5ATMA1 vs BSC019N08NS5ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC074N15NS5ATMA1 disebabkan oleh Infineon dan BSC019N08NS5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSC074N15NS5ATMA1 | BSC019N08NS5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Transistor | N-Channel MOSFET | — |
| Technology | OptiMOS™ 5 trench | OptiMOS 5 (N-channel trench) |
| Drain-Source Voltage (VDS) | 150 V | — |
| Continuous Drain Current (ID) at TC=25°C | 114 A | — |
| Power Dissition (PD) at TC=25°C | 214 W | — |
| On-Resistance RDS(on) max @ VGS=10V | 7.4 mΩ | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | ±20 V |
| Kemasan | SuperSO8 5x6 (PG-TSON-8-3) with wettable flanks | PG-TSON-8-3 (SuperSO8 5x6 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gambaran Suhu Operasi | [DATA_NEEDED: TJ min/max] | -55 C to +150 C |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typ] | 3.0 V |
| Total Gate Charge Qg | [DATA_NEEDED: Qg total] | [DATA_NEEDED: total gate charge Qg] |
| Status RoHS | Compliant | Compliant |
| Aras MSL | [DATA_NEEDED: MSL rating] | 1 |
| Body Diode | Integrated | — |
| Manufacturer | — | Infineon Technologies |
| Polarity | — | N-Channel |
| Drain-Source Voltage (VDS) max | — | 80 V |
| Continuous Drain Current (ID) at TA=25C | — | 28 A |
| Continuous Drain Current (ID) at TC=25C | — | 237 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) max at VGS=10V | — | 1.9 mOhm |
| Power Dissipation (TA=25C) | — | 3 W |
| Power Dissipation (TC=25C) | — | 214 W |
| Avalanche Rated | — | Yes |