BSC076N06NS3GATMA1 vs IAUT300N08S5N012ATMA2 Perbandingan

Perbandingan bersamaan detil BSC076N06NS3GATMA1 dari Infineon dan IAUT300N08S5N012ATMA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IAUT300N08S5N012ATMA2 IAUT300N08S5N012ATMA2 - 80V 300A 1.2mΩ N-Ch MOSFET | Infineon

IAUT300N08S5N012ATMA2 - 80V 300A 1.2mΩ N-Ch MOSFET | Infineon

IAUT300N08S5N012ATMA2 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSC076N06NS3GATMA1 IAUT300N08S5N012ATMA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 3 OptiMOS™-5 80 V
Technology N-Channel Trench MOSFET —
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at TC=25C 50 A —
On-Resistance RDS(on) max at VGS=10V 7.6 mΩ —
On-Resistance RDS(on) max at VGS=4.5V 10.4 mΩ —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) 2.0 V to 3.5 V —
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 69 W —
Rentang Suhu Kerja -55C to +150C -55 °C to +175 °C (TJ)
Paket PG-TDSON-8-5 (SuperSO8 5x6 mm) PG-HSOF-8-1 (8-pin HSOF with drain tab)
Tipe Mounting Surface Mount Surface Mount
Level MSL 1 (unlimited) [DATA_NEEDED: MSL level]
RoHS Compliance Compliant Compliant
Bebas Halogen Yes (per Infineon product page) —
Tipe Transistor — N-Channel MOSFET
Drain-to-Source Voltage (VDS) — 80 V
Continuous Drain Current (ID, Tc=25°C) — 300 A
Pulsed Drain Current (IDM) — 1200 A (per datasheet, typical)
On-Resistance RDS(on) max @ VGS=10V — 1.2 mΩ
Maximum Power Dissipation (PD, Tc) — 375 W
Gate-to-Source Voltage (VGS) — ±20 V
Automotive Qualification — AEC-Q101 qualified

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IAUT300N08S5N012ATMA2

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