BSC0901NSIATMA1 vs BSC0901NSATMA1 Perbandingan

Perbandingan bersamaan detil BSC0901NSIATMA1 dari Infineon dan BSC0901NSATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC0901NSIATMA1 BSC0901NSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS 25V N-Channel Power MOSFET N-Channel Trench MOSFET (OptiMOS)
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at Ta=25C 28 A —
Continuous Drain Current (ID) at Tc 100 A 100 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-State Resistance (RDS(on)) at VGS=10V 2.0 mOhm typical —
On-State Resistance (RDS(on)) at VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5V] —
Gate-Source Threshold Voltage (VGS(th)) 2.2 V max —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge nC] —
Power Dissipation (PD) at Ta=25C 2.5 W —
Power Dissipation (PD) at Tc 69 W 69 W
Rentang Suhu Kerja -55 C to +150 C -55C to +150C
Paket PG-TDSON-8-6 (5x6 mm with exposed pad) TDSON-8-5 (PG-TDSON-8-5) / SuperSO8 5x6 mm
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 8 —
Level MSL 1 —
Status RoHS Compliant Compliant
Bebas Halogen Yes —
Manufacturer — Infineon Technologies
Part Family — OptiMOS 30V
Drain-to-Source Voltage (VDS) Max — 30 V
Continuous Drain Current (ID) at Ta — 28 A
On-State Resistance RDS(on) Max at VGS=10V — 1.9 mOhm
On-State Resistance RDS(on) Typ at VGS=10V — [DATA_NEEDED: RDS(on) typical]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th)]
Gate Charge (Qg) Typ — [DATA_NEEDED: Qg total]
Avalanche Energy (EAS) — 80 mJ
Power Dissipation (PD) at Ta — 2.5 W
Tingkat Sensitivitas Kekeringan (MSL) — 1
Built-in Body Diode — Yes
Configuration — Single N-Channel with Built-in Diode

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