BSC0902NSATMA1 vs BSC016N06NSATMA1 Perbandingan

Perbandingan bersamaan detil BSC0902NSATMA1 dari Infineon dan BSC016N06NSATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC0902NSATMA1 BSC016N06NSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 30 V 60 V
Continuous Drain Current (ID, Ta) 24 A —
Pulsed Drain Current (IDM, Tc) 100 A —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 48 W —
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical value] —
RDS(on) @ VGS=10V max [DATA_NEEDED: RDS(on) at VGS=10V] —
RDS(on) @ VGS=4.5V max [DATA_NEEDED: RDS(on) at VGS=4.5V] —
Total Gate Charge (Qg typ) [DATA_NEEDED: Qg typical] —
Rentang Suhu Kerja -55C to +150C (Tj) -55 °C to +150 °C
Paket PG-TDSON-8-6 (SuperSO8) PG-TDSON-8 FL (SuperSO8 5x6)
Tipe Mounting Surface Mount Surface Mount
Qualification JEDEC qualified for target applications —
RoHS Compliance Compliant (Pb-free lead plating) —
Bebas Halogen Yes, per IEC 61249-2-21 —
Avalanche Rated Yes (100% avalanche tested) —
Manufacturer — Infineon Technologies
Product Series — OptiMOS™ 5 60V
Channel Type — N-Channel
Continuous Drain Current (ID, Tc) — 100 A
Continuous Drain Current (ID, TA) — 30 A
On-Resistance RDS(on) max @ VGS=10V — 1.6 mΩ
Total Gate Charge (Qg) — 71 nC
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
Power Dissipation (TA) — 2.5 W
Power Dissipation (TC) — 139 W
Level MSL — 1 (unlimited)
Status RoHS — Compliant
Gate Drive (recommended) — 10 V
Technology — OptiMOS™ 5

Spek dan Sumber

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