BSC0902NSATMA1 vs BSC040N08NS5ATMA1 Perbandingan

Perbandingan bersamaan detil BSC0902NSATMA1 dari Infineon dan BSC040N08NS5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC0902NSATMA1 BSC040N08NS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 30 V 80 V
Continuous Drain Current (ID, Ta) 24 A —
Pulsed Drain Current (IDM, Tc) 100 A —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 48 W —
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical value] [DATA_NEEDED: VGS(th) typical]
RDS(on) @ VGS=10V max [DATA_NEEDED: RDS(on) at VGS=10V] —
RDS(on) @ VGS=4.5V max [DATA_NEEDED: RDS(on) at VGS=4.5V] —
Total Gate Charge (Qg typ) [DATA_NEEDED: Qg typical] —
Rentang Suhu Kerja -55C to +150C (Tj) —
Paket PG-TDSON-8-6 (SuperSO8) PG-TDSON-8-7 (SuperSO8 5x6)
Tipe Mounting Surface Mount Surface Mount
Qualification JEDEC qualified for target applications —
RoHS Compliance Compliant (Pb-free lead plating) —
Bebas Halogen Yes, per IEC 61249-2-21 —
Avalanche Rated Yes (100% avalanche tested) —
Manufacturer — Infineon Technologies
Part Number — BSC040N08NS5ATMA1
Technology — OptiMOS 5 (N-channel trench MOSFET)
Continuous Drain Current (ID, Tc=25C) — 100 A
Maximum Drain Current (ID, Tc=25C, package-limited) — 121 A
On-Resistance (RDS(on) max, VGS=10V) — 4 mOhm
Power Dissipation (Ta=25C, 1in² PCB) — 2.5 W
Power Dissipation (Tc=25C) — 104 W
Suhu Hubung Kerja — -55 C to +175 C
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical]
Status RoHS — Compliant
Level MSL — 1
Primary Application — Synchronous rectification in telecom and server power supplies

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