BSC0902NSIATMA1 vs BSC066N06NSATMA1 Perbandingan

Perbandingan bersamaan detil BSC0902NSIATMA1 dari Infineon dan BSC066N06NSATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC0902NSIATMA1 BSC066N06NSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS 30V —
Channel Type N-Channel —
Drain-Source Voltage (VDS) Max 30 V —
Gate-Source Voltage (VGS) Max [DATA_NEEDED: VGS max rating] —
Continuous Drain Current (ID) at TA=25C 23 A —
Continuous Drain Current (ID) at TC=25C 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] 256 A
On-State Resistance RDS(on) Max at VGS=10V 2.8 mOhm —
Gate Charge QG(0V..10V) 24 nC —
Output Charge QOSS 17 nC —
Power Dissipation (TA) 2.5 W —
Power Dissipation (TC) 48 W —
Rentang Suhu Kerja -55C to +150C (junction) —
Paket PG-TDSON-8-6 (TDSON-8) PG-TDSON-8-6 (TDSON EP)
Tipe Mounting Surface Mount Surface Mount
Built-in Diode Yes (single with built-in diode) —
Level MSL [DATA_NEEDED: MSL rating] 1
Status RoHS Compliant Compliant
Lead-Free Yes —
Bebas Halogen Yes —
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at TC=25°C — 64 A
Continuous Drain Current (ID) at TC=100°C — 45 A
Gate-Source Voltage (VGS) max — ±20 V
Static Drain-Source On-Resistance (RDS(on)) at VGS=10V — 6.6 mΩ (max)
Gate Threshold Voltage (VGS(th)) — 1.7 V (typ)
Total Gate Charge (Qg) — 26 nC (typ)
Power Dissipation (PD) at TC=25°C — 46 W
Power Dissipation (PD) at TA=25°C — 2.5 W
Thermal Resistance, Junction-to-Case (RθJC) — 1.3 °C/W
Suhu Hubung Kerja — -55°C to +150°C
Technology — OptiMOS 5 60 V trench-gate

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