BSC0902NSIATMA1 vs BSC066N06NSATMA1 Comparison

Detailed side-by-side comparison of BSC0902NSIATMA1 by Infineon and BSC066N06NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSC0902NSIATMA1 BSC066N06NSATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies —
Product Family OptiMOS 30V —
Channel Type N-Channel —
Drain-Source Voltage (VDS) Max 30 V —
Gate-Source Voltage (VGS) Max [DATA_NEEDED: VGS max rating] —
Continuous Drain Current (ID) at TA=25C 23 A —
Continuous Drain Current (ID) at TC=25C 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] 256 A
On-State Resistance RDS(on) Max at VGS=10V 2.8 mOhm —
Gate Charge QG(0V..10V) 24 nC —
Output Charge QOSS 17 nC —
Power Dissipation (TA) 2.5 W —
Power Dissipation (TC) 48 W —
Operating Temperature Range -55C to +150C (junction) —
Package PG-TDSON-8-6 (TDSON-8) PG-TDSON-8-6 (TDSON EP)
Mounting Type Surface Mount Surface Mount
Built-in Diode Yes (single with built-in diode) —
MSL Level [DATA_NEEDED: MSL rating] 1
RoHS Status Compliant Compliant
Lead-Free Yes —
Halogen Free Yes —
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at TC=25°C — 64 A
Continuous Drain Current (ID) at TC=100°C — 45 A
Gate-Source Voltage (VGS) max — ±20 V
Static Drain-Source On-Resistance (RDS(on)) at VGS=10V — 6.6 mΩ (max)
Gate Threshold Voltage (VGS(th)) — 1.7 V (typ)
Total Gate Charge (Qg) — 26 nC (typ)
Power Dissipation (PD) at TC=25°C — 46 W
Power Dissipation (PD) at TA=25°C — 2.5 W
Thermal Resistance, Junction-to-Case (RθJC) — 1.3 °C/W
Operating Junction Temperature — -55°C to +150°C
Technology — OptiMOS 5 60 V trench-gate

Datasheets & Resources

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