BSC0921NDIATMA1 vs ISZ033N03LF2SATMA1 Perbandingan

Perbandingan bersamaan detil BSC0921NDIATMA1 dari Infineon dan ISZ033N03LF2SATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC0921NDIATMA1 ISZ033N03LF2SATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Technology OptiMOS 25V (N-channel) OptiMOS 5
Configuration Dual N-Channel MOSFET Array —
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (ID) 17 A (per channel) —
Pulsed Drain Current (IDM) 31 A (per channel, package-limited) [DATA_NEEDED: pulsed drain current]
Total Power Dissipation (PD) 1 W —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
On-State Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at VGS=10V/4.5V] —
Gate Charge (Qg) Ultra-low (OptiMOS 25V family characteristic) —
Output Charge (Qoss) Ultra-low (OptiMOS 25V family characteristic) —
Paket PG-TISON-8 (8-pin, exposed pad) PG-TSDSON-8 FL (8-pin)
Tipe Mounting Surface Mount Surface Mount
Suhu Kerja -55C to +150C (junction) —
Status RoHS Compliant Compliant
Level MSL 1 (per Infineon OptiMOS family) —
Primary Application Synchronous buck converters, VRMs, POL regulators —
FET Type — N-Channel
Continuous Drain Current (ID) at TA=25C — 20 A
Continuous Drain Current (ID) at TC=25C — 109 A
Power Dissipation (PD) at TA=25C — 3 W
Power Dissipation (PD) at TC=25C — 71 W
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) — 2.35 V max @ 30 uA
On-Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at 10V VGS]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typ]
Suhu Hubung Kerja — -55 C to +175 C

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