BSC0921NDIATMA1 vs ISZ033N03LF2SATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC0921NDIATMA1 disebabkan oleh Infineon dan ISZ033N03LF2SATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC0921NDIATMA1 ISZ033N03LF2SATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Technology OptiMOS 25V (N-channel) OptiMOS 5
Configuration Dual N-Channel MOSFET Array —
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (ID) 17 A (per channel) —
Pulsed Drain Current (IDM) 31 A (per channel, package-limited) [DATA_NEEDED: pulsed drain current]
Total Power Dissipation (PD) 1 W —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
On-State Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at VGS=10V/4.5V] —
Gate Charge (Qg) Ultra-low (OptiMOS 25V family characteristic) —
Output Charge (Qoss) Ultra-low (OptiMOS 25V family characteristic) —
Kemasan PG-TISON-8 (8-pin, exposed pad) PG-TSDSON-8 FL (8-pin)
Jenis Pemasangan Surface Mount Surface Mount
Suhu Operasi -55C to +150C (junction) —
Status RoHS Compliant Compliant
Aras MSL 1 (per Infineon OptiMOS family) —
Primary Application Synchronous buck converters, VRMs, POL regulators —
FET Type — N-Channel
Continuous Drain Current (ID) at TA=25C — 20 A
Continuous Drain Current (ID) at TC=25C — 109 A
Power Dissipation (PD) at TA=25C — 3 W
Power Dissipation (PD) at TC=25C — 71 W
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) — 2.35 V max @ 30 uA
On-Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at 10V VGS]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typ]
Suhu Hubungan Operasi — -55 C to +175 C

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