BSC097N06NSATMA1 vs IPD90N04S403ATMA1 Perbandingan

Perbandingan bersamaan detil BSC097N06NSATMA1 dari Infineon dan IPD90N04S403ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC097N06NSATMA1 IPD90N04S403ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 —
Part Status Active —
FET Type N-Channel —
Drain-to-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at Tc=25C 46 A —
Continuous Drain Current (ID) at Ta=25C [DATA_NEEDED: ID at Ta=25C PCB-mounted] —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM peak value] —
RDS(on) max at VGS=10 V 9.7 mOhm —
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical value] —
Gate Charge (Qg typ) [DATA_NEEDED: total gate charge Qg] —
Power Dissipation at Ta=25C 2.5 W —
Power Dissipation at Tc=25C 36 W —
Suhu Hubung Kerja -55C to +150C -55C to +175C
Paket / Case PG-TDSON-8-6 (SuperSO8 5x6 mm) —
Tipe Mounting Surface Mount Surface Mount
Technology OptiMOS 5 (Trench) Trench MOSFET (OptiMOS-T2)
Status RoHS Compliant —
Level MSL 1 (Unlimited) MSL1 (peak reflow up to 260C)
Avalanche Rated Yes (EAS per datasheet) —
Product Family — OptiMOS-T2
Channel Type — N-Channel
Drain-Source Voltage (V_DS) — 40 V
Continuous Drain Current (I_D, Tc) — 90 A
On-State Resistance (R_DS(on)) — 3.2 mOhm typical at V_GS = 10 V
Maximum Power Dissipation (P_D, Tc=25C) — 94 W
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: gate threshold voltage]
Paket — PG-TO252-3-313 (DPAK)
AEC-Q101 Qualification — Qualified (automotive grade)
Avalanche Tested — 100% avalanche-tested
RoHS Compliance — Compliant (Green Package)

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