BSC118N10NSGATMA1 vs BSC070N10NS5ATMA1 Perbandingan
Perbandingan bersamaan detil BSC118N10NSGATMA1 dari Infineon dan BSC070N10NS5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSC118N10NSGATMA1 | BSC070N10NS5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 2 | — |
| FET Type | N-Channel | — |
| Mode | Enhancement (Normal Level) | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at Ta=25C | 11 A | — |
| Continuous Drain Current (ID) at Tc=25C | 71 A | — |
| Power Dissipation (PD) at Tc=25C | 114 W | — |
| Paket | PG-TDSON-8-1 (TDSON EP, 5x6 mm) | PG-TDSON-8-7 (SuperSO8 5x6 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Hubung Kerja | -55 C to +150 C | — |
| Technology | Trench MOSFET | OptiMOS 5 (N-channel trench) |
| Lead Plating | Pb-free | — |
| Status RoHS | Compliant | Compliant |
| Bebas Halogen | Yes | — |
| JEDEC Qualification | Qualified per target application | — |
| Target Application | High-frequency SMPS, synchronous rectification | — |
| Gate Charge x RDS(on) FOM | Excellent (per datasheet) | — |
| Drain-Source Voltage (VDS) max | — | 100 V |
| Continuous Drain Current (ID) at TC=25C | — | 80 A |
| RDS(on) max @ VGS=10V | — | 7 mOhm |
| Gate-Source Voltage (VGS) max | — | 20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical VGS(th) value] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: typical Qg] |
| Power Dissition at TC=25C (Ptot) | — | 83 W |
| Power Dissipation at TA=25C | — | 2.5 W |
| Rentang Suhu Hubung Kerja | — | -55 C to +150 C |
| Level MSL | — | 1 (per JEDEC J-STD-020) |
| Lead-Free | — | Yes |
| Typical Application | — | Synchronous rectification in SMPS |