BSC146N10LS5ATMA1 vs BSC265N10LSFGATMA1 Perbandingan

Perbandingan bersamaan detil BSC146N10LS5ATMA1 dari Infineon dan BSC265N10LSFGATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSC146N10LS5ATMA1 BSC146N10LS5ATMA1 - 100V 44A OptiMOS 5 N-MOSFET | Infineon

BSC146N10LS5ATMA1 - 100V 44A OptiMOS 5 N-MOSFET | Infineon

BSC146N10LS5ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSC146N10LS5ATMA1 BSC265N10LSFGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS 5 (logic-level) OptiMOS 2 (TrenchFET)
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) max 100 V —
Continuous Drain Current (ID) at Tc=25 C 44 A —
Pulsed Drain Current (ID,pulse) [DATA_NEEDED: IDM] —
RDS(on) max at VGS=10 V 14.6 mOhm —
RDS(on) max at VGS=4.5 V [DATA_NEEDED: RDS(on) at 4.5 V] —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) Logic-level (typ. ~1.7 V) [DATA_NEEDED: VGS(th) typical/min]
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 52 W —
Rentang Suhu Kerja -55 C to +150 C (TJ max) -55 C to +150 C (junction)
Paket PG-TDSON-8-6 (SuperSO8 5x6 mm) PG-TDSON-8-1 (TDSON-8)
Tipe Mounting Surface Mount Surface Mount
Level MSL 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
Status RoHS Compliant Compliant
Avalanche Energy (EAS) [DATA_NEEDED: EAS] —
FET Type — N-Channel
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID, Tc) — 40 A
Continuous Drain Current (ID, Ta) — 6.5 A
Power Dissipation (PD, Tc) — 78 W
On-State Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) max at VGS=10V]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg total at VGS=10V]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss typical]
Lead-Free — Yes
Avalanche Rated — Yes
Series — OptiMOS 2

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