BSL308CH6327XTSA1 vs BSP316PH6327XTSA1 Perbandingan

Perbandingan bersamaan detil BSL308CH6327XTSA1 dari Infineon dan BSP316PH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSL308CH6327XTSA1 BSP316PH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS™ low-voltage power MOSFETs —
Configuration Complementary dual MOSFET (1 N-channel + 1 P-channel) —
Paket PG-TSOP6-6 (TSOP-6, 6 pins) PG-SOT223-4 (TO-261-4)
Drain-to-Source Voltage (VDS) 30 V -100 V
Continuous Drain Current - N-channel (ID, N-ch) 2.3 A —
Continuous Drain Current - P-channel (ID, P-ch) 2 A —
Total Power Dissipation (Ptot) 500 mW —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] [DATA_NEEDED: VGS(th) typical]
On-State Resistance N-channel (RDS(on) @ VGS=10V) [DATA_NEEDED: RDS(on) N-ch] —
On-State Resistance P-channel (RDS(on) @ VGS=10V) [DATA_NEEDED: RDS(on) P-ch] —
Total Gate Charge (Qg) 5 nC @ 10 V —
Input Capacitance (Ciss) 18 pF —
Rentang Suhu Kerja -55 °C to +150 °C -55 C to +150 C (junction)
Tipe Mounting Surface Mount Surface Mount
Level MSL 1 (per JEDEC J-STD-020) 1
Automotive Qualified Yes (per Infineon part-number suffix, automotive grade) —
Status RoHS Compliant Compliant
Lead-Free Yes —
Bebas Halogen Yes (per Infineon product family convention) —
FET Type — P-Channel
Continuous Drain Current (ID) at TA=25C — -680 mA
Total Power Dissipation (Ptot) at TA=25C — 1.8 W
On-Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at VGS=-10V]
Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Jumlah Pin — 3 + thermal tab
Channel Mode — Enhancement
Technology — SIPMOS (P-channel MOSFET)
Packaging — Tape & Reel (H6327 suffix)

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon