BSO613SPVGXUMA1 vs BSO150N03MDGXUMA1 Perbandingan
Perbandingan bersamaan detil BSO613SPVGXUMA1 dari Infineon dan BSO150N03MDGXUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
BSO150N03MDGXUMA1 - 30V Dual N-Channel MOSFET, 9.3A, OptiMOS 3M | Infineon
BSO150N03MDGXUMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | BSO613SPVGXUMA1 | BSO150N03MDGXUMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | P-Channel | — |
| Drain-Source Voltage (VDS) | -60 V | — |
| Continuous Drain Current (ID) at TA=25C | -3.44 A | — |
| Power Dissipation (PD) at TA=25C | 2.5 W | — |
| Paket | PG-DSO-8-6 (Power-SO-8) | PG-DSO-8 (SO-8 with exposed pad) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | OptiMOS (Trench) | OptiMOS 3M (30V trench MOSFET) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max values] | — |
| RDS(on) at VGS=10V | [DATA_NEEDED: RDS(on) max at VGS=10V] | — |
| RDS(on) at VGS=4.5V | [DATA_NEEDED: RDS(on) max at VGS=4.5V] | — |
| Rentang Suhu Kerja | -55C to +150C (junction, per industry standard for Power-SO-8 MOSFETs) | -55C to +150C |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulsed value] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max +/-V] | 20 V |
| Level MSL | MSL3 (per JEDEC J-STD-020, industry standard for Power-SO-8) | 1 (unlimited) |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Avalanche Rated | Yes (per Infineon OptiMOS family) | — |
| Jumlah Pin | 8 (6 active, 2 thermal/NC) | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSO150N03MDGXUMA1 |
| Product Type | — | Dual N-Channel MOSFET Array |
| Drain-Source Voltage (VDS) max | — | 30 V |
| Continuous Drain Current (ID) max per channel | — | 9.3 A |
| On-State Resistance (RDS(on)) max | — | 15 mOhm at VGS=10V |
| Gate Threshold Voltage (VGS(th)) typ | — | 1.0 V |
| Power Dissipation (PD) max | — | 1.4 W |
| Channel Configuration | — | Dual N-Channel (independent) |