BSP129H6327XTSA1 vs BSR316PH6327XTSA1 Perbandingan

Perbandingan bersamaan detil BSP129H6327XTSA1 dari Infineon dan BSR316PH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSP129H6327XTSA1 BSR316PH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel, Depletion Mode P-Channel Enhancement Mode
Drain-Source Voltage (VDS) 240 V -100 V
Continuous Drain Current (ID) at TA=25C 350 mA —
On-Resistance RDS(on) max 4.2 ohm (some sources 6 ohm) —
Power Dissipation (PD) at TA=25C 1.8 W —
Paket PG-SOT223-4 (SOT-223, 3+Tab) PG-SC59-3 (SC-59 / SOT-23 equivalent)
Tipe Mounting Surface Mount Surface Mount
Suhu Kerja -55 C to +150 C (junction) —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Threshold Voltage VGS(off) [DATA_NEEDED: depletion threshold VGS(off)] —
dv/dt Ruggedness Yes (rated) —
Automotive Qualification AEC-Q101 qualified —
Status RoHS Compliant Compliant
Lead-Free Yes —
Level MSL [DATA_NEEDED: MSL rating] 1
Process Technology SIPMOS (vertical DMOS) —
Drain Terminal Tab (pin 4) —
Manufacturer — Infineon Technologies
Part Number — BSR316PH6327XTSA1
Series — OptiMOS
Continuous Drain Current (ID) at TA — -360 mA
Continuous Drain Current (ID) at TC — [DATA_NEEDED: ID at TC specific value]
On-State Resistance RDS(on) max — 1800 mOhm at VGS = -10 V
Gate Threshold Voltage VGS(th) — -1.7 V typical, -2.5 V max
Gate Charge Qg — [DATA_NEEDED: Qg total]
Power Dissipation (Tc) — 500 mW
Rentang Suhu Kerja — -55 C to +150 C (junction)
Qualification — Automotive
Polarity — P-Channel

Spek dan Sumber

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