BSP316PH6327XTSA1 vs BSL308CH6327XTSA1 Perbandingan

Perbandingan bersamaan detil BSP316PH6327XTSA1 dari Infineon dan BSL308CH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSP316PH6327XTSA1 BSL308CH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type P-Channel —
Drain-to-Source Voltage (VDS) -100 V 30 V
Continuous Drain Current (ID) at TA=25C -680 mA —
Total Power Dissipation (Ptot) at TA=25C 1.8 W —
On-Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at VGS=-10V] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] [DATA_NEEDED: VGS(th) typical value]
Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Paket PG-SOT223-4 (TO-261-4) PG-TSOP6-6 (TSOP-6, 6 pins)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55 C to +150 C (junction) -55 °C to +150 °C
Jumlah Pin 3 + thermal tab —
Channel Mode Enhancement —
Technology SIPMOS (P-channel MOSFET) —
Status RoHS Compliant Compliant
Level MSL 1 1 (per JEDEC J-STD-020)
Packaging Tape & Reel (H6327 suffix) —
Manufacturer — Infineon Technologies
Product Family — OptiMOS™ low-voltage power MOSFETs
Configuration — Complementary dual MOSFET (1 N-channel + 1 P-channel)
Continuous Drain Current - N-channel (ID, N-ch) — 2.3 A
Continuous Drain Current - P-channel (ID, P-ch) — 2 A
Total Power Dissipation (Ptot) — 500 mW
On-State Resistance N-channel (RDS(on) @ VGS=10V) — [DATA_NEEDED: RDS(on) N-ch]
On-State Resistance P-channel (RDS(on) @ VGS=10V) — [DATA_NEEDED: RDS(on) P-ch]
Total Gate Charge (Qg) — 5 nC @ 10 V
Input Capacitance (Ciss) — 18 pF
Automotive Qualified — Yes (per Infineon part-number suffix, automotive grade)
Lead-Free — Yes
Bebas Halogen — Yes (per Infineon product family convention)

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