BSR315PH6327XTSA1 vs BSR316PH6327XTSA1 Perbandingan

Perbandingan bersamaan detil BSR315PH6327XTSA1 dari Infineon dan BSR316PH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSR315PH6327XTSA1 BSR316PH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSR315PH6327XTSA1 BSR316PH6327XTSA1
Series OptiMOS P-Channel OptiMOS
FET Type P-Channel, Enhancement Mode P-Channel Enhancement Mode
Drain-Source Voltage (VDS) -60 V -100 V
Continuous Drain Current (ID) -620 mA (Ta) —
Power Dissipation (PD) 500 mW (Ta) —
On-State Resistance (RDS(on)) 800 mOhm @ -620 mA, -10 V —
Gate Threshold Voltage (VGS(th)) ±20 V (max VGS) —
Input Capacitance (Ciss) 176 pF @ 25 V —
Total Gate Charge (Qg) 6 nC @ 10 V —
Rentang Suhu Kerja -55 C to +150 C (TJ) -55 C to +150 C (junction)
Paket PG-SC59-3 / SOT-23-3 PG-SC59-3 (SC-59 / SOT-23 equivalent)
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 3 —
Packaging Tape & Reel (TR) —
Status RoHS Compliant Compliant
Automotive Qualified Yes (per Infineon product family marking) —
Continuous Drain Current (ID) at TA — -360 mA
Continuous Drain Current (ID) at TC — [DATA_NEEDED: ID at TC specific value]
On-State Resistance RDS(on) max — 1800 mOhm at VGS = -10 V
Gate Threshold Voltage VGS(th) — -1.7 V typical, -2.5 V max
Gate Charge Qg — [DATA_NEEDED: Qg total]
Power Dissipation (Tc) — 500 mW
Qualification — Automotive
Level MSL — 1
Polarity — P-Channel

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