BSS123NH6327XTSA1 vs BSS119NH6327XTSA1 Perbandingan

Perbandingan bersamaan detil BSS123NH6327XTSA1 dari Infineon dan BSS119NH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSS123NH6327XTSA1 BSS123NH6327XTSA1 - 100V N-Ch MOSFET, 190mA | Infineon

BSS123NH6327XTSA1 - 100V N-Ch MOSFET, 190mA | Infineon

BSS123NH6327XTSA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSS123NH6327XTSA1 BSS119NH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number BSS123NH6327XTSA1 —
Part Status Active —
FET Type N-Channel, Enhancement Mode —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) 190 mA (Ta) —
Power Dissipation (PD) 500 mW (Ta) —
RDS(on) Max 6 Ω @ VGS = 10 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical and max VGS(th)] 0.8 V to 1.8 V (typical) [DATA_NEEDED: exact min/typ/max]
Gate-Source Voltage Max (VGS) ±20 V —
Paket PG-SOT23 (SOT-23-3) PG-SOT23 (SOT-23-3)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55 °C to +150 °C (junction) -55°C to +150°C (TJ) [DATA_NEEDED: TA range from datasheet]
Qualification AEC-Q101 (automotive) AEC-Q101 (automotive grade)
RoHS Compliance Yes (Pb-free lead plating) —
Level MSL 1 (per JEDEC J-STD-020) 1 [DATA_NEEDED: confirm from datasheet]
Tipe Transistor — N-Channel MOSFET
FET Technology — Enhancement-mode, planar N-channel
Drain-Source Voltage (VDS) max — 100 V
Continuous Drain Current (ID) at TA=25°C — 190 mA
Power Dissipation (PD) at TA=25°C — 500 mW
Drain-Source On-Resistance (RDS(on)) max — 6 Ω (typical) [DATA_NEEDED: exact VGS condition and max value]
Gate Drive Voltage (VGS) — ±20 V max
Status RoHS — Compliant
Lead-Free — Yes
Packaging — Tape & Reel (3,000 pcs/reel)

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