BSS123NH6327XTSA1 vs BSS119NH6327XTSA1 比較
詳細並排比較 BSS123NH6327XTSA1 由 Infineon 與 BSS119NH6327XTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSS123NH6327XTSA1 | BSS119NH6327XTSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSS123NH6327XTSA1 | — |
| Part Status | Active | — |
| FET Type | N-Channel, Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) | 190 mA (Ta) | — |
| Power Dissipation (PD) | 500 mW (Ta) | — |
| RDS(on) Max | 6 Ω @ VGS = 10 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical and max VGS(th)] | 0.8 V to 1.8 V (typical) [DATA_NEEDED: exact min/typ/max] |
| Gate-Source Voltage Max (VGS) | ±20 V | — |
| 封裝 | PG-SOT23 (SOT-23-3) | PG-SOT23 (SOT-23-3) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度範圍 | -55 °C to +150 °C (junction) | -55°C to +150°C (TJ) [DATA_NEEDED: TA range from datasheet] |
| Qualification | AEC-Q101 (automotive) | AEC-Q101 (automotive grade) |
| RoHS Compliance | Yes (Pb-free lead plating) | — |
| MSL 等級 | 1 (per JEDEC J-STD-020) | 1 [DATA_NEEDED: confirm from datasheet] |
| 電晶體類型 | — | N-Channel MOSFET |
| FET Technology | — | Enhancement-mode, planar N-channel |
| Drain-Source Voltage (VDS) max | — | 100 V |
| Continuous Drain Current (ID) at TA=25°C | — | 190 mA |
| Power Dissipation (PD) at TA=25°C | — | 500 mW |
| Drain-Source On-Resistance (RDS(on)) max | — | 6 Ω (typical) [DATA_NEEDED: exact VGS condition and max value] |
| Gate Drive Voltage (VGS) | — | ±20 V max |
| RoHS 狀態 | — | Compliant |
| Lead-Free | — | Yes |
| Packaging | — | Tape & Reel (3,000 pcs/reel) |