BSS123NH6327XTSA1 vs BSS119NH6327XTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSS123NH6327XTSA1 disebabkan oleh Infineon dan BSS119NH6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
BSS123NH6327XTSA1 BSS123NH6327XTSA1 - 100V N-Ch MOSFET, 190mA | Infineon

BSS123NH6327XTSA1 - 100V N-Ch MOSFET, 190mA | Infineon

BSS123NH6327XTSA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSS123NH6327XTSA1 BSS119NH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number BSS123NH6327XTSA1 —
Part Status Active —
FET Type N-Channel, Enhancement Mode —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) 190 mA (Ta) —
Power Dissipation (PD) 500 mW (Ta) —
RDS(on) Max 6 Ω @ VGS = 10 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical and max VGS(th)] 0.8 V to 1.8 V (typical) [DATA_NEEDED: exact min/typ/max]
Gate-Source Voltage Max (VGS) ±20 V —
Kemasan PG-SOT23 (SOT-23-3) PG-SOT23 (SOT-23-3)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55 °C to +150 °C (junction) -55°C to +150°C (TJ) [DATA_NEEDED: TA range from datasheet]
Qualification AEC-Q101 (automotive) AEC-Q101 (automotive grade)
RoHS Compliance Yes (Pb-free lead plating) —
Aras MSL 1 (per JEDEC J-STD-020) 1 [DATA_NEEDED: confirm from datasheet]
Jenis Transistor — N-Channel MOSFET
FET Technology — Enhancement-mode, planar N-channel
Drain-Source Voltage (VDS) max — 100 V
Continuous Drain Current (ID) at TA=25°C — 190 mA
Power Dissipation (PD) at TA=25°C — 500 mW
Drain-Source On-Resistance (RDS(on)) max — 6 Ω (typical) [DATA_NEEDED: exact VGS condition and max value]
Gate Drive Voltage (VGS) — ±20 V max
Status RoHS — Compliant
Lead-Free — Yes
Packaging — Tape & Reel (3,000 pcs/reel)

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