BSS127H6327XTSA2 vs BSP129H6906XTSA1 Perbandingan

Perbandingan bersamaan detil BSS127H6327XTSA2 dari Infineon dan BSP129H6906XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSP129H6906XTSA1 BSP129H6906XTSA1 - 240V N-Ch Depletion MOSFET | Infineon

BSP129H6906XTSA1 - 240V N-Ch Depletion MOSFET | Infineon

BSP129H6906XTSA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSS127H6327XTSA2 BSP129H6906XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel SIPMOS, enhancement mode N-Channel, Depletion Mode
Drain-Source Voltage (VDS) 600 V 240 V
Continuous Drain Current (ID) 21 mA (Ta) —
Pulsed Drain Current (ID,pulse) [DATA_NEEDED: pulsed ID limit] —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) 4.5 V (logic level, rated) —
On-State Resistance (RDS(on)) max 500 ohm at ID = 21 mA —
Total Power Dissipation (Ptot) 500 mW (Ta) —
Suhu Hubung Kerja -55 C to +150 C —
Paket SOT-23-3 (PG-SOT23) PG-SOT223-4 (SOT-223)
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 3 —
dv/dt Rated Yes —
Automotive Qualification AEC-Q101 —
Status RoHS Compliant (lead-free) Compliant
Bebas Halogen Yes, per IEC 61249-2-21 —
Level MSL [DATA_NEEDED: MSL rating] 1 (unlimited floor life)
Manufacturer — Infineon Technologies
Part Number — BSP129H6906XTSA1
Continuous Drain Current (ID) at TA=25C — 350 mA
Power Dissipation (PD) at TA=25C — 1.8 W
Drain-Source On-Resistance (RDS(on)) — 6 Ohm (max)
Operating Mode — Normally-On (Depletion)
Gate-Source Pinch-Off Voltage — [DATA_NEEDED: VGS(off) typical value]
Jumlah Pin — 3 functional + 1 tab (4 leads)
Rentang Suhu Kerja — [DATA_NEEDED: TJ max]
ESD Protection — Integrated Zener diodes on gate

Spek dan Sumber

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