BSS127H6327XTSA2 vs BSP129H6906XTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSS127H6327XTSA2 disebabkan oleh Infineon dan BSP129H6906XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
BSP129H6906XTSA1 BSP129H6906XTSA1 - 240V N-Ch Depletion MOSFET | Infineon

BSP129H6906XTSA1 - 240V N-Ch Depletion MOSFET | Infineon

BSP129H6906XTSA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSS127H6327XTSA2 BSP129H6906XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel SIPMOS, enhancement mode N-Channel, Depletion Mode
Drain-Source Voltage (VDS) 600 V 240 V
Continuous Drain Current (ID) 21 mA (Ta) —
Pulsed Drain Current (ID,pulse) [DATA_NEEDED: pulsed ID limit] —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) 4.5 V (logic level, rated) —
On-State Resistance (RDS(on)) max 500 ohm at ID = 21 mA —
Total Power Dissipation (Ptot) 500 mW (Ta) —
Suhu Hubungan Operasi -55 C to +150 C —
Kemasan SOT-23-3 (PG-SOT23) PG-SOT223-4 (SOT-223)
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 3 —
dv/dt Rated Yes —
Automotive Qualification AEC-Q101 —
Status RoHS Compliant (lead-free) Compliant
Boson Bebas Yes, per IEC 61249-2-21 —
Aras MSL [DATA_NEEDED: MSL rating] 1 (unlimited floor life)
Manufacturer — Infineon Technologies
Part Number — BSP129H6906XTSA1
Continuous Drain Current (ID) at TA=25C — 350 mA
Power Dissipation (PD) at TA=25C — 1.8 W
Drain-Source On-Resistance (RDS(on)) — 6 Ohm (max)
Operating Mode — Normally-On (Depletion)
Gate-Source Pinch-Off Voltage — [DATA_NEEDED: VGS(off) typical value]
Bilangan Pin — 3 functional + 1 tab (4 leads)
Gambaran Suhu Operasi — [DATA_NEEDED: TJ max]
ESD Protection — Integrated Zener diodes on gate

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