BSS138NH6327XTSA2 vs 2N7002H6327XTSA2 Perbandingan

Perbandingan bersamaan detil BSS138NH6327XTSA2 dari Infineon dan 2N7002H6327XTSA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSS138NH6327XTSA2 2N7002H6327XTSA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity N-Channel —
Operating Mode Enhancement —
V(BR)DSS (Drain-Source Breakdown Voltage) 60 V —
R_DS(on) max @ V_GS=10V 3.5 ohm —
Continuous Drain Current (Ta) 230 mA —
Power Dissipation (Ta) 360 mW —
Gate Threshold V_GS(th) [DATA_NEEDED: typical V_GS(th) value] —
Paket PG-SOT-23 (3-pin) PG-SOT23 (SOT-23-3)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja [DATA_NEEDED: Tj max and operating range] -55C to +150C (Tj)
Gate-Source Voltage V_GS max ±20 V —
dv/dt Rated Yes —
Bebas Halogen Yes (per IEC 61249-2-21) —
RoHS Compliance Compliant —
AEC-Q101 Qualification Qualified —
Lead Plating Pb-free —
Marking Code [DATA_NEEDED: top-side marking code] —
Packaging Tape and Reel —
Tipe Transistor — N-Channel MOSFET
Technology — OptiMOS (Planar)
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) — 300 mA (Ta)
Power Dissipation (PD) — 500 mW (Ta)
On-State Resistance (RDS(on)) — 3 ohm max @ VGS = 10 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
Gate Charge (Qg) — [DATA_NEEDED: Qg total]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Channel Mode — Enhancement
Level MSL — 1 (per JEDEC J-STD-020)
Status RoHS — Compliant
Lead-Free — Yes
Qualification — Industrial / Commercial Grade

Spek dan Sumber

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